Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Oxidation Mechanism of SiC

SiC의 산화반응 기구

  • 최태운 (연세대학교 요업공학과) ;
  • 이홍림 (연세대학교 요업공학과)
  • Published : 1981.02.01
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Abstract

SiC powder was heated in air over the temperature range of 1100-135$0^{\circ}C$. $\beta$-cristobalite was formed to cover the surfaces of SiC particles by the reaction: $SiC(s)+20_2(g)=SiO_2(s)+CO_2(g)$. It is assumed that the diffusion of oxygen ion through the formed surface layer of $\beta$-cristobalite controls the oxidation of the SiC particles. The diffusion coefficient of oxygen ion through the $\beta$-cristobalite layer was obtained as the following equation: $D=3.84{\times}10^{-17}$exp(-14.7/RT)

Keywords

References

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