Synthesis of Aluminum Nitride from Metal Aluminum Powders

금속알루미늄으로부터 질화알루미늄의 합성

  • 최상욱 (인하대학교 무기재료공학과) ;
  • 이승제 (인하대학교 무기재료공학과)
  • Published : 1985.06.01

Abstract

Aluminum nitride (AlN) was synthesized from aluminum (Al) powders as a starting material in the tempe-rature range of 450~1, 15$0^{\circ}C$ in the presence of 90% $N_2$-10%$H_2$ gases. The thermogravimentric analysis showed that the nitridation of Al powders started at about 43$0^{\circ}C$ and escalated greatly from 53$0^{\circ}C$. The scanning electron microcopic observation revealed that AlN crystals were different in shape with varying temperature of nitridation. The crystals of AlN which were formed in the lower temperature than the melting point of Al were spherical while those of AlN in the higher temperature were fibrous. The yield of AlN was determined quantitatively by both XRD method and weight gain between before and after the nitridation of Al compacts. It was considered that the former was available for the specimen which was made in the high nitriding temperature. But the latter was unavilable for the same one probably because of the volatile loss of Al in the higher temperature.

Keywords

References

  1. J. Am. Cer. Soc. v.42 no.2 Aluminum Nitride, a Refractory for Aluminum to 2,000℃ George Long;L.M. Foster
  2. J. Electrochem. Soc. v.107 no.4 Some Properties of Aluminum Nitride K.M. Tayor;Camille Lenie
  3. Am. Cer. Soc. Bull. v.40 no.7 Aluminum Nitride Containers for Vacuum Evaporation of Aluminum George Long;L.M. Foster
  4. Special Ceramics 1962 Preparation and Oxidation of Aluminium Nitride C.F. Cooper;C.M. George;S.W.J. Hopkins;P. Popper(ed.)
  5. J. Electrochem. Soc. v.123 no.8 Compatibility of Aluminum Nitride in Environments Representative of High Temperature Cells Ram A. Sharma;Richard A. Murie;Elton J.Cairns
  6. Toshiba Review no.7-8 Aluminum Nitride and Silicon Nitride for High-Temperature Vehicular Gas Turbine Engines Katsutoshi Komeya;Fumiyoshi Noda
  7. Metall. Trans. v.2 no.3 Electrical characteristics of AIN Insulating Films in the Thickness Range 40 to 150Å G. Lewicki;J. Maserjian
  8. J. Electrochem. Soc. v.118 no.11 The Use of Metal-organics in the Preparation of Semiconductor Materials H.M. Manasevit;F.M. Erdmann;W.I. Simpson
  9. J. Electrochem. Soc. v.122 no.7 The Preparation and Properties of Aluminum Nitride Films T.L. Chu;R.W. Kelm
  10. Nippon Kagaku Kaishi v.10 Preparation of Aluminum Nitride by Electric Arc Method Tadao Sato;Minoru Iwata
  11. J. Mat. Sci. v.18 Chemical Preparation of Ultra-Fine Aluminium Nitride by Electric-Arc Plasma G.P. Vissokov;L.B. Brakalov
  12. J. Cer. Assoc. Jap. v.75 no.8 The Observation of the Reaction Sintering Process of the AIN-AI System, by High Temperature X-ray Diffraction Sigetomo Matsuo;Katsutoshi Komeya;Yoshiaki Matsuki;Satoshi Shikanai
  13. J. Jap. Soc. Powder and Powder Metallurgy v.17 no.3 The Effects of Particle Size of AIN and Composition on Sintering with Nitriding Reaction of the System AIN-AI Katsutoshi Komeya;Hiroshi Inoue
  14. Yogyo Kyokai Shi v.83 no.10 The Nitridation of Powder Aluminium in the Fluidized-bed Reaction Shigetomo Matsuo;Noriyasu Hotta;Yuhji Nishiwaki
  15. J. Phys. Chem. v.60 Kinetics of Nitridation of Maguesiuin and Aluminum Prason Sthapitanonda;John L. Margrave
  16. J. Mat. Sci. v.14 no.70-85 The Influence of Hydrogen in the Nitriding Gas on the Strength, Structure and Composition of Reaction-sintered Silicon Nitride M.W. Lindley;D.P. Elias;B.F. Jones;K.C. Pitman
  17. J. Mat. Sci. v.16 no.1945-1955 The Role of Hydrogen in the Nitridation of Silicon Powder Compacts H. Dervisbegovic;F.L. Riley
  18. Denki Kagaku v.40 no.10 Synthesis of Aluminum Nitride Whisker by Sublimation Method Akio Kato
  19. Phys. Stat. Sol. v.2 no.1109-1114 $\ "{U}$ber Wachstum von AIN-Einkristallen aus der Dampfphase H.D. Witzke
  20. Phys. Stat. Sol. v.7 no.331-338 Morphologie und Wachstumsmechanismus von AIN-Einkristallen J. Pastrnak;L. Roskovcova