Abstract

This study suggests the use of fuzzy model in the semiconductor devices modeling as a black box approach. When membership functions of fuzzy sets used in a fuzzy model are simple piecewise-linear functions, the fuzzy model can be reresented in a simple equation. To show that the fuzzy model can be very realistic and simple when used in semiconductor devices modeling, we construct fuzzy models for bipolar transistor, MOSFET and GaAs FET, and compare those with canonical piecewise-linear models.

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