Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
권호 표지

Preparation of SnO$_2$ Thin Films by Chemical Vapor Deposition Using Hydrolysis of SnCla$_4$ and Gas-sensing Characterisics of the Film -Effect of Deposition Variables on the Deposition Behavior and the Electrical Resistivity of SnO$_2$ Thin Film-

SnCl$_4$가수분해 반응의 화학증착법에 의한 SnO$_2$박막의 제조 및 가스센서 특징(I) Preparation of SnO2 Thin Films by chemical Vapor Deposition Using Hydrolysis of SnCl4 and gas-sensing characteristics of the Film

  • 김용일 (부산대학교 무기재료공학과) ;
  • 김광호 (부산대학교 무기재료공학과) ;
  • 박희찬 (부산대학교 무기재료공학과)
  • Published : 1990.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

Thin films of tin oxide were prepared by chemical vapor deposition (C.V>D) using the hydrolysis reaction of SnCl4, Deposition rate increased with the increase of temperature up to $500^{\circ}C$and then decreased at $700^{\circ}C$, Deposition rate with SnCl4 partial pressure showed RidealEley behavir. It was found that SnO2 thin film deposited at the temperature above $400^{\circ}C$ had(110) and (301) plane preferred orientation with crystallinity of rutite structure. Electrical resisvity of SnO2 thin film decreased with increase increase of deposition temperature and showed minimum value of 10-3 ohm at $500^{\circ}C$and than largely increased increased with further increase of deposition temperture.

Keywords