Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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The Characteristics of Residual Films on Silicon Surface $CHF_3/C_2F_6$ Reactive Ion Etching

$CHF_3/C_2F_6$ 플라즈마에 의한 실리콘 표면 잔류막의 특성

  • 권광호 (한국전자통신연구소 단위공정개발실) ;
  • 박형호 (한국전자통신연구소 물성분석연구실) ;
  • 이수민 (한국전자통신연구 소 단위공정개발실) ;
  • 강성준 (한국전자통신연구소 단위공정개발실) ;
  • 권오준 (한국전 자통신연구소 물성분석연구실) ;
  • 김보우 (한국전자통신연구소 단위공정개발실) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1992.02.01
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Abstract

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

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