Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지

An Effect of $O_2/Ar$ Ratio on the Characteristics of RF Magnetron Sputtered $BaTiO_3$ Thin Film

RF Magnetron Sputtering법으로 $BaTiO_3$ 박막 증착시 $O_2/Ar$비가 박막의 특성에 미치는 영향

  • 안재민 (한양대학교 무기재료공학과) ;
  • 최덕균 (한양대학교 무기재료공학과) ;
  • 김영호 (한양대학교 재료공학과)
  • Published : 1994.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

Keywords

References

  1. J. Vac. Sci. Technol. A v.10 no.4 Intergration of Ferroelec-tic Thin Films into Nonvolatile Memories S. Sinharoy;H. Buhay
  2. J. Vac. Sci. Technol. A v.10 no.4 Recent Advances in Physical Vapor Growh Processes for Ferroeletric Thin Films S.B. Krupanidhi
  3. Proc. IEEE v.59 no.10 Characteristics of RF Sputtered Barium Titanate Thin Films L.H. Pratt
  4. J. Vac. Sci. Technol. v.16 no.2 Radio-Frequency-Sputte-red Tetragonal Barium Titanate Films on Silicon J.K.G. Panitz;C.C. Hu
  5. J. Appl. Phys. v.53 no.12 Photo-voltaic Properties of Ferroelectric BaTiO₃ Thin Films rf Sputter Deposited on Silicon V.S. Dharmadhikari;W.W. Grannemann
  6. Ferroelectrics v.37 Fa-brication of BaTiO₃Films by RF Planar-Magnetron Sputtering T. Nakatomo;T. Kosaka;S. Omori;O. Omoto
  7. Ferroelectrics v.37 The Effect of Temperature on Properties of RF Sputtered BaTiO₃Films J.C. Olson;D.T. Stevison;I. Bransky
  8. J. Appl. Phys. v.55 no.10 Characterization of RF Sputtered BaTiO₃Thin Films Using a Liquid Electrolyte for the TOP Contact T.L. Rose;E.M. Killiher;A.N. Scoville;S.E. Stone
  9. Jap. J. Appl. Phys. v.26 no.Suppl. Preparation of BaTiO₃Film by RF Sputtering and Their Crystallographic, Dielectric and Optical Properties T. Nagatomo;O. Omoto
  10. Thin Solid Films v.176 The Influence of Structure on the Piezoelectric Properties of BaTiO₃and (BaSr)TiO₃Thin Films with a Diffuse Phase Transition Z.Surowiak;A.M.Margolin;I.N.Zakharchenko;S.V.Biryukov
  11. J. Appl. Phys. v.66 no.12 Preperation of Epitaxial ABO₃Perovskite-Type Oxide Thin Films on a (100)MgAl₂O₄/Si Substrate S. Matsubara;S. Miura;Y. Miyasaka;N. Shohata
  12. Deposition Technologies for Films an Coatings J.A.Thornton;R.F. Bunshah(ed.)
  13. Science Forum 姜誘電體膊膜集積化技術 阿部浩之;崎山惠三
  14. Appl. Phys. Lett. v.53 Reliable Single-Tar-get Sputtering Process for High-Temperature Super-conducting Films and Devices R.L. Sandstorm;W.J. Gallagher;T.R. Dinger;R.H. Koch;P.B. Laibowitz;A.W. Kleinsasser;R.J. Gambino;B. Bumble;M.F. Chisholm
  15. J. Appl. Phys. v.57 no.2 Preparation and Characterization of RF Sputtered Indium Thin Oxide Films K. Sreenivas;T.S. Rao;A. Mansingh;S. Chandra
  16. J. Appl. Phys. v.62 no.11 Struc-tural and Electrical Properties of RF Spettered Amor-phous Barium Titanate Thin Films K. Sreenivas;Abhai Mansingh;M. Sayer