Abstract

This study was concerned, after the oxide films(50 [.angs.]) were grown in a furnace and the MOS capacitor fabricated, with experimental comparison and verification about the Interference Effect of Electronic Waves in the ultra thin oxide/silicon interface. The average error was about 0.8404[%] in n'gate/p-sub and about 0.2991[%] in p$^{+}$gate/p-sub. Therefore, it was predicted that the Interference Effect of Electronic Waves can overcome somewhat according to the gate polarity.

Keywords

• Interference effect;
• Electronic waves

• 간섭효과;
• 전자파;