Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)
- Volume 7 Issue 2
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- Pages.191-196
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- 1997
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- 1225-1429(pISSN)
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- 2234-5078(eISSN)
6H-SiC single crystal growth by the sublimation method : (II) the analysis of internal defects
승화법에 의한 6H-SiC 단결정 성장 : (II) 내부 결함 해석
- Kim, Hwa-Mok (Department of Ceramic Engineering, Hanyang University) ;
- Kang, Seung-Min (YoungDo Research Institute) ;
- Joo, Kyoung (YoungDo Research Institute) ;
- Shim, Kwang-Bo (Department of Ceramic Engineering, Hanyang University) ;
- Auh, Keun-Ho (Department of Ceramic Engineering, Hanyang University)
- Published : 1997.05.01
Abstract
The micro-defects in the SiC single crystals were characterized using a variety of the microscopic techniques (OM, TEM, AFM). It was observed that the hexagonal-plate precipitates and the longitudinal micropipes are present inside of SiC wafers. TEM results exhibited that there are amorphous phase in the SiC wafer and the phase were originated from the formation of the nonstoichiometric
다양한 미세결함분석기술(OM, TEM, AFM)을 이용하여 승화법에 의해서 성장된 6H-Sic 단결정 wafer의 내부미소결함을 분석하였다. Wafer내부에는 6각판상헝의 석출물 및 micropipes들이 독립적으로 혹은 혼합적으로 존재하고 있음이 확인되었고, TEM 분석에 의한 비정질상의 검출로 이들은 불안정한 결정성장 인자나 비화학양론적
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