Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties and Fabrication of Ferroelectric (PZT

PLD를 이용한 강유전체(PZT, PST, PT)/YBCO 박막 구조의 제작과 전기적인 특성에 관한 연구

  • 김정환 (고려대학교 공대 전기.전자.전파공학부) ;
  • 이재형 (고려대학교 공대 전기.전자.전파공학부) ;
  • 문병무 (고려대학교 공대 전기.전자.전파공학부)
  • Published : 1998.07.01
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Abstract

(PZT, PST, PT)/ YBCO structured have been grown on single crystal $LaAlO_3$ using in-situ Nb:YAG pulsed laser deposition technique. The optimum conditions of fabrication for high quality films have been established under various oxygen pressure. TBCO was used as a metallic electrode for polarizing ferroelectric thin fillms. Lattice mismatch of these materials were found to be with in 3%. As a result XRD patterns and rocking curves, (PZT, PST, PT)/ YBCO multiayered thin films on $LaAlO_3$ substrates showed preferred orientation to c-axis. For invastigation on electrical properties of ferroelectric thin films, remanent polaiztion $P_r$ and coercive field $E_c$ were measured for three samples. At each optimum condition, they showed the values of P_r=60 \mu C/cm^2 and E_c=240kV/ cm for PT, 30\mu C/cm^2 and 105kV/cm for PZT, 1.5\mu C/cm^2$ and 15kV/cm for PST. Frequency dependence of dielectric properties of ferroelectric thin fillms was also investigated. As a result, it showed the frequency dependence was relatively small in the range of 10Hz~10kHz.

Keywords

References

  1. Appl. Phys. lett. v.54 Role of atomic oxygen in the low-temperature growth of $YBa_2Cu_3O_{7-{\delta}}$ thin films by laser ablation deposition Koren, G.;Gupta, A.;Baseman, R. J.
  2. Ferroelectric materials and their applications YuHuab Xu
  3. J. Appl. Phys. v.64 Switching kinetics of lead zirconate titanate submicron thin-film memories Scott, J. F.;Kammerdiner, L.;Parris, M.;Traynor, S.;Ottenbacher, V.;Shawabkeh, A.;Oliver, W. F.
  4. J. Appl. Phys. v.76 Ferroelectric properties and fatigue of varying thickness: Blocking layer model Larsen, P. K.;Dormans, G. J. M.;Taylor, D. J.;Veldhoven van P. J.
  5. J. Appl. Phys. v.73 Dependence of electrical properties on film thickness in $Pb(Zr_xTi_{1-x})O_3$ thin films produced by metalorganic chemical vapor deposition Sakashita, Y.;Segawa, H.;Tominaga, K.;Okada, M.
  6. Appl. Phys. Lett. v.64 Oriented ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on [001] Pt/SiO₂Si substrates using a bismuth titanate template layer Ramesh, R.;Lee, J.;Sands, T.;Keramidas, V. G.;Auciello, O.