Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optical Properties of HVPE Grown GaN Substrates

HVPE법으로 성장된 GaN 기판의 광학적 특성

  • 김선태 (대전산업대학교 재료공학과) ;
  • 문동찬 (광운대학교 전자재료공학과)
  • Published : 1998.10.01
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Abstract

In this work, the optical properties of freestanding GaN single crystalline substrate grown by hydride vapor phase epitaxy(HVPE) were investigated. The low temperature PL spectrum in freestanding GaN consists of free and bound exciton emissions, and a deep DAP recombination around at 1.8eV. The optically-pumped stimulated emission in freestanding GaN substrate was observed at room temperature. At the maximum power density of 2MW/$\textrm{cm}^2$, the peak energy and FEHM of stimulated emission were 3.318 eV and 8meV, respectively. The excitation power dependence on the integrated emission intensity indicates the threshold pumping power density of 0.4 MW/$\textrm{cm}^2$.

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