Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Cathodoluminescence Characterization of GaN Thick Films Grown by Using the HVPE Method

Hwa-Mok KIM;Jun-Sung CHOI;Jae-Eung OH;Tae-Kyung YOO

  • Published : 2000.12.01

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Abstract

Thick (> 200 ${\mu}$m) GaN films grown by hydride vapor-phase epitaxy (HVPE) were examined. High-quality films were examined by field emission scanning electron microscopy (FE-SEM), cathodoluminescence (CL) spectroscopy, and imaging. We carried out spatially resolved studies of film cross-sections and the interface side of the GaN films/sapphire as well as the top surfaces. The top surfaces of the films showed narrow band-edge emission lines while the cathodoluminescence spectra near the interface were broad and extended to energies above the band gap. Close to the interface, we were able to directly observe a region, about 20-${\mu}$m thick, containing columnar structures.

Keywords

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