Transactions on Electrical and Electronic Materials
- Volume 1 Issue 3
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- Pages.6-9
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- 2000
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- 1229-7607(pISSN)
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- 2092-7592(eISSN)
Temperature-Dependent Photoluminescence from Er-implanted undoped and Mg-doped GaN
- Kim, Sangsig (Department of Electrical Engineering Korea University) ;
- Sung, Man-Young (Department of Electrical Engineering Korea University) ;
- Junki Hong (Department of Electrical Engineering Korea University)
- Published : 2000.09.01
Abstract
Selectively excited photoluminescence(PL) spectroscopy has been carried out on the ~1540 nm