Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Study of Electron Transport coefficients in $SiH_4$-Ar Mixtures by Using Boltzmann Equation Analysis and Monte-Carlo Simulation

볼츠만방정식과 몬테칼로법에 의한 $SiH_4$-Ar 혼합가스의 전자수송계수에 관한 연구

  • 하성철 (동국대학교 전기공학과) ;
  • 전병훈 (중부대학교 컴퓨터응용설계학과)
  • Published : 2001.02.01
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Abstract

The electron transport coefficients(the electron drift velocity, W, and the longitudinal and transverse diffusion coefficient, D$_{L}$ and D$_{T}$) in SiH$_4$-Ar mixtures containing 0.5% and 5.0% monosilane were calculated over the E/N range from 0.01 to 300 Td and over the gas pressure range 0.5, 1.0 and 1.5 Torr by the time-of-flight(TOF) method of the Boltzmann equation(BE.) and Monte-Carlo simulation(MCS). The electron energy distribution function in each SiH$_4$-Ar mixtures at E/N=10 Td and L=0.2 cm, which in equilibrium region in the mean electron enregy were compared.red.

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References

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