Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Change of Recombination Zone in Emission Layer by Characteristics of a Hole Injection Layer

정공 주입층 특성에 따른 발광층에서의 재결합 영역 변화

  • Published : 2001.08.01
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Abstract

We fabricated the organic light emittign diodes (OLEDs) with ITO/Cu-Pc/triphenyl-diamine (TPD)/TPD+tris-(8-hydroxyquinoline) aluminum (Alq$_3$)/Al. The electrical properties of Cu-Pc thin film were studied as a hole injection layer. the energy gap of Cu-Pc thin films is decreased according to the substrate heat treatment temperature increased. It could be controlled the hole mobility by changing the heat treatment condition of Cu-Pc. The emission wavelengths could be controlled by changing hole mobility and recombination zone in emission layer.

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References

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