Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Direct Bonding of Si II 1.3$\mu\textrm{m}$-SiO$_2$/1.3$\mu\textrm{m}$-SiO$_2$ II SOI substrates prepared by FLA method

선형접합기를 이용한 Si II 1.3$\mu\textrm{m}$-SiO$_2$/1.3$\mu\textrm{m}$-SiO$_2$ II SOI 기판의 직접접합

  • 송오성 (서울시립대학교 재료공학과) ;
  • 이영민 (서울시립대학교 재료공학과) ;
  • 이상현 (서울시립대학교 재료공학과) ;
  • 이진우 (서울시립대학교 재료공학과) ;
  • 강춘식 (서울대학교 재료공학부)
  • Published : 2001.02.01
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Abstract

10cm-diameter Si(100)∥$1.3\mu\textrm{m}$-X$1.3_2$X$1.3\mu\textrm{m}$-$SiO_2$∥Si(100) afers were prepared using a fast linear annealing (FLA) equipment. 1.3$\mu\textrm{m}$-thick $SiO_2$ films were grown by dry oxidation process. After cleaning and premating the wafers in a class 100 clean room, they were heat treated using with the FLA and conventional electric furnace. Bonded area and bond strength of wafer pairs were measured using a infrared (IR) camera and razor blade crack opening method, respectively. It was confinmed that the bonded area by FLA was around 99% and the bond strength value reached 2172mJ/$\m^2$, which is equivalent to theoritical bond strength. Our result implies that thick $SiO_2$ SOI may be prepared more easily by using $SiO_2$$SiO_2$ bonding interfaces then those of Si/$SiO_2$'s.

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