Korean Chemical Engineering Research

The Korean Institute of Chemical Engineers (한국화학공학회)
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Performance Improvement of Ir Oxide Electrode for Organic Destruction

이리듐 산화물 전극의 유기물 분해 성능 개선

Kim, Kwang-Wook;Lee, Eil-Hee;Kim, Jung-Sik;Shin, Ki-Ha;Jung, Boong-Ik;Kim, Kwang-Ho
김광욱;이일희;김정식;신기하;정붕익;김광호

  • Published : 2002.04.30
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Abstract

This study has carried out a performance improvement of $IrO_{2}$ electrode for the purpose of organic destruction by sintering the electrode at a high temperature, and the material, electrochemical, and organic destruction properties of the electrode were evaluated by measurements of surface resitivity, TGA, XPS, AES, voltammogram, and TOC of 4CP destruction. A sintering temperature of around $650^{\circ}C$ rather than $400-550^{\circ}C$ suggested in the literatures for fabrication of Ir oxide electrode enhanced the organic destruction yield because $IrCl_{3}$ of the precursor solution on electrode surface was sufficiently converted to $IrO_{2}$. An additional oxide layer between $IrO_{2}$ layer and Ti substrate, to prevent a solid diffusion of $TiO_{2}$ due to oxidation of Ti substrate during high-temperature sintering, improved the organic destruction further so that the 4CP destruction yield raised to about 4 times higher than that by the conventional Ir oxide electrode. The destruction yield of 4CP solution with chloride ion at the improved electrode increased as much as that by $RuO_{2}$ electrode in the same solution.

본 연구에서는 유기물 분해를 위한 $IrO_{2}$ 전극을 고온 소결시킴으로써 성능을 향상시켰으며, 이 전극의 재료적, 전기화학적 특성 및 유기물 분해능 특성이 전극 표면저항, TGA, XPS, AES, voltammogram과 4CP 분해의 TOC를 측정함으로써 평가되었다. 문헌에 나타나 있는 Ir 산화물 전극 제조 소결온도 범위인 $400-550^{\circ}C$를 넘는 $650^{\circ}C$에서 전극의 소결은 코팅 용액의 $IrCl_{3}$을 충분히 $IrO_{2}$로 전환시켜 유기물 분해 성능을 증진시켰다. 또한 고온 소결 시 Ti 지지체가 산화되어 $TiO_{2}$가 전극 표면으로 고체 확산되고 이로 인한 전극 표면의 저항 증가 및 전극 활성 감소를 억제시키기 위하여 $TiO_{2}$-screening 층을 Ti 모재와 최종 Ir 산화물 전극 층 사이에 삽입시키는 경우, 유기물 분해율은 더욱 증진하여 기존의 Ir 산화물 전극에서의 4CP 분해율보다 약 4배 정도 증가하였으며, 유기물 용액에 염소이온이 공존할 경우 $RuO_{2}$ 전극에서의 유기물 분해율과 동등한 성능을 보였다.

Keywords

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