Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
권호 표지

Low-Temperature RTCVD Growth and Characterization of Silicon-Carbide Nanorods Through Carbon Nanotubes

Md. SHAJAHAN;Y. H. MO;A. K. M. Fazle KIBRIA;K. C. KIM;K. S. NAHM;E. K. SUH

  • Published : 2002.11.01
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Abstract

Silicon-carbide (SiC) nanorods were synthesized at 1100 $^{\circ}C$ through a two-step reaction scheme. Carbon nanotubes (CNTs) were first grown by using thermal decomposition of $C_2H_2$ over a Fe/Co metal catalyst loaded on a Si(100) wafer surface. The grown CNTs were then in-situ reacted with tetramethylsilane (TMS) to form SiC nanorods. The lengths and diameters of the grown SiC nanorods agreed with those of the CNTs used for the building blocks in the growth. The length of the SiC nanorods increased with increasing CNT growth time. The structural characterization using X-ray diffraction (XRD) and Fourier transform (FT)-Raman spectroscopy identified the growth of ${\beta}-SiC$ nanorods. A broad photoluminescence (PL) peak was observed at 2.32 eV from the SiC nanorods. The growth mechanism of the SiC nanorod is discussed in this work.

Keywords

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