Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Electrical Characterization and Metal Contacts of ZnO Thin Films Grown by the PLD Method

PLD 방법에 의해서 증착된 ZnO 박막의 전기적 특성 및 접합 특성에 관한 연구

  • 강수창 (명지대학교 세라믹공학과) ;
  • 신무환 (명지대학교 세라믹공학과)
  • Published : 2002.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, metal/ZnO contacts were thermally annealed at different temperatures (as-dep., 400$^{\circ}C$, 600$^{\circ}C$, 800$^{\circ}C$, 1000$^{\circ}C$) for the investigation of electrical properties, and surface and interface characteristics. The analysis of the element composition and the chemical bonding state of the surface was made by the XPS(X-ray photoelectron spectroscopy). An attempt was made to establish the electrical property-microstructure relationship for the (Ti, Au)/ZnO. The Ti/ZnO contact exhibits an ohmic characteristics with a relatively high contact resistance of 4.74${\times}$10$\^$-1/ $\Omega$$\textrm{cm}^2$ after an annealing at 400$^{\circ}C$. The contact showed a schottky characteristics when the samples were annealed at higher temperature than 400$^{\circ}C$. The transition from the ohmic to schottky characteristics was contributed from the formation of the oxide layers as was confirmed by the peaks for O-O and Ti-O bondings in XPS analysis. For the Au/ZnO contact the lowest contact resistance was obtained from the as-deposited sample. The resistance was slowly increased with annealing temperature up to 600$^{\circ}C$. The ohmic characteristics were maintained eden fort 600$^{\circ}C$ annealing. The XPS analysis showed that the Au-O intensity was dramatically decreased with temperature above 600$^{\circ}C$.

Keywords

References

  1. J.Appl.Phys v.80 no.2 Influence of postdeposition anealing on the structural and optical properties of sputtered zinc oxide film V.Gupta;A.Mansingh https://doi.org/10.1063/1.362842
  2. 한국전기전자재료학회 1992춘계학술대회논문집 Characteristics of ZnO thin films prepared by photo-CVD G.C.Park;H.D.Chung;W.J.Jeong;Y.T.Yoo
  3. 한국전기전자재료학회 1995춘계학술대회논문집 Electrical properties of ZnO/sapphire piezoelectric transducer by RF magnetron sputtering J.D.Lee;K.W.Jung;S.C.K;J.T.Song
  4. 전기전자재료학회논문지 v.10 no.2 A properties of ZnO thin film deposited by magnetron sputtering and its resistivity and microstructure due to annealing S.H.Yi;Y.K.Sung;J.K.Kim
  5. J.of Crystal Growth v.151 Doping limitations in wide gap Ⅱ-Ⅵ compounds by Fermi level pinning W.Faschinger;S.Ferreira;H.Sitter https://doi.org/10.1016/0022-0248(95)00068-2
  6. Solid-State Electronics v.43 Ohmic contacts to n-type and p-type ZnSe M.R.Park;W.A.Anderson https://doi.org/10.1016/S0038-1101(98)00191-9
  7. Air Force Atomic Lab W.Schokley
  8. Physics of Semiconductor Devices S.M.Sze
  9. J.Crystal Growth v.225 ZnO schottky ultraviolet photodetectors S.Liang;H.Sheng;Y.Liu;Z.Huo;Y.Lu;H.Shen https://doi.org/10.1016/S0022-0248(01)00830-2
  10. Jpn.J.Appl.Phys v.18 no.8 Metal-semiconductor electroluminescent diodes in ZnO single crystal T.Minami;S.Takata;Yamaniahi;T.Kawamura https://doi.org/10.1143/JJAP.18.1617
  11. The CRC Handbook of Solid State Electrochemistry P.J.Gellings;H.J.M.Bouwmeester
  12. Fundamentals of Surface and Thin Film Analysis L.C.Feldman;J.W.Mayer
  13. Solid State Commuication v.94 no.4 Band gaps, crystal-field splitting,spin-orbit coupling and excition binding energies in ZnO under hydrostatic pressure A.Mang;K.Reimann;St.Riidenacke https://doi.org/10.1016/0038-1098(95)00054-2
  14. Phys.Rev.B. v.42 no.17 Surface cleaning with hydrogen plasma for low-defect-density ZnSe homoepitaxial growth T.Ohno;K.Shiraishi https://doi.org/10.1103/PhysRevB.42.11194