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Densification Behavior of Reaction-Bonded Silicon Nitride Prepared by Using Coarse Si Powders

조대 Si입자분말을 사용한 질화반응 Si3N4의 치밀화 거동

  • 이주신 (경성대학교 재료공학과) ;
  • 문지훈 (경성대학교 재료공학과) ;
  • 한병동 (한국기계연구원 재료기술연구부) ;
  • 박동수 (한국기계연구원 재료기술연구부) ;
  • 김해두 (한국기계연구원 재료기술연구부)
  • Published : 2002.01.01

Abstract

Effect of sintering additives on the densification behavior of reaction-bonded silicon nitride prepared by using coarse Si powders is discussed. Sintering additives such as 6 wt% $Y_2O_3$+1wt% $A1_2O_3$ (6YlA) did not give rise to full densification, while full densification was obtained by using the sintering additives such as 6wt% $Y_2O_3$+3 wt% $A1_2O_3$+ 2wt% $SiO_2$ (6Y3A2S) and 9wt% $Y_2O_3$+ 1.5wt% $A1_2O_3$+ 3wt% $SiO_2$ (9Yl.5A3S). In the case of 6Y3A2S addition, high fracture strength of 960 MPa and the fracture toughness of $6.5 MPa.m^{1/2}$ were obtained.

평균입경 25$\mu m$의 Si조대분말에 소결조제의 조성과 양을 변화시켜 질화반응 질화규소 (RBSN)세라믹스를 제조할 때 나타나는 치밀화 거동, 미세구조의 발달 및 기계적 특성에 대하여 고찰하였다. 6wt% $Y_2O_3$ + 1wt% $Al_2O_3$(6YlA)의 소결조제를 첨가한 경우에는 치밀화를 이루지 못하였으나, 6wt% $Y_2O_3+3\;wt%\;Al_2O_3+2\;wt%\;SiO_2(6Y3A2S)$와 9wt% $Y_2O_3$+1.5wt% $A1_2O_3$+ 3w% $SiO_2$(9Yl.5A3S)의 소결조제를 첨가하여 이론밀도에 가까운 치밀화를 이루었다. $1900^{\circ}C$에서 소결한 6Y3A2S시편의 경우, 960MPa의 높은 파괴강도값과 $6.5MPa.m^{1/2}$의 파괴인성값을 얻었다.

Keywords

References

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  1. Effects of Debinding Atmosphere on Properties of Sintered Reaction-bonded Si3N4 Prepared by Tape Casting Method vol.53, pp.6, 2016, https://doi.org/10.4191/kcers.2016.53.6.622
  2. Preparation and Properties of Silicon Nitride Ceramics by Nitrided Pressureless Sintering (NPS) Process vol.317-318, pp.1662-9795, 2006, https://doi.org/10.4028/www.scientific.net/KEM.317-318.125