Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of Indium Tin Oxide Transparent Conductive Thin Films at Various Substrate and Annealing Temperature

  • Jeong, Woon-Jo (Department of Information & Telocommnication, Hanlyo University) ;
  • Kim, Seong-Ku (Department of Electrical engineering, UCLA) ;
  • Kim, Jong-Uk (School of Electronics & Information Engineering, Chonbuk National University) ;
  • Park, Gye-Choon (Department of Electrical Engineering, Mokpo National University) ;
  • Gu, Hal-Bon (Department of Electrical Engineering, Chonnam National University)
  • Published : 2002.03.01
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Abstract

ITO thin films with thickness of 3000 $\AA$ were fabricated by rf magnetron sputtering system with a 10 mol % SnO$_2$-90 mol % In$_2$O$_3$target at various substrate temperature and annealing temperature in air. And we investigated structural, electrical and optical characteristics of them. It's resistivity, carrier concentration and Hall mobility was 2$\times$10$\^$-4/ Ωcm, 7$\times$10$\^$20/∼ 9$\times$10$\^$20/ cm$\^$-3/ and 21∼23 cm$^2$/V$.$sec respectively. And it's optical transmittance and energy band gap was above 85 % in the visible range and 3.53 eV respectively.

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References

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