Transactions of the Korean Society of Mechanical Engineers A (대한기계학회논문집A)

The Korean Society of Mechanical Engineers (대한기계학회)
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Substrate Effects on the Response of PZT Infrared Detectors

상이한 기판조건에 따른 PZT 적외선 감지소자의 성능 변화

  • Go, Jong-Su (Semiconductor Technology Research Center, Electronics and Telecommunications Research Institute) ;
  • Gwak, Byeong-Man (Dept. of Mechanical Engineering, Korea Advanced Institute of Science and Technology) ;
  • Liu, Weiguo (Electrical and Electronic Eng., singapore) ;
  • Zhu, Weiguang (Electrical and Electronic Eng., singapore)
  • 고종수 (한국전자통신연구원 원천기술연구소) ;
  • 곽병만 (한국과학기술원 기계공학과) ;
  • ;
  • Published : 2002.03.01
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Abstract

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

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References

  1. Lee, D.H., Lee, J. S., Cho, S. M., Nam, H. J., Lee, J. H., Choi, J. R., Kim, K.Y., Kim, S.T. and Okuyama, M., 1995, 'Microstructures and Electrical Properties of (Pb, La)TiO3 Thin Films Grown on the Pt electrodes with a Percolating Network Structure,' Jpn. J. Appl. Phys., Vol. 34, Part I, No. 5A, pp. 2453-2458 https://doi.org/10.1143/JJAP.34.2453
  2. Kohli, M., Wuethrich, C.. Brooks, K., Willing, B., Forster, M., Muralt, P., Setter, N. and Ryser, P., 1997, 'Pyroelectric Thin-film Sensor Array,' Sensors and Actuators, A60, pp. 147-153 https://doi.org/10.1016/S0924-4247(97)01484-2
  3. Butler, D. P., Butler, Z. C.. Jahanzeb, A., Gray, J. E. and Travers, C. M., 1998, 'Micromachined YBaCuO Capacitor Structures as Uncooled Pyroelectric Infrared Detectors,' J. Appl. Phys., Vol. 84, No.3, pp. 1680-1687 https://doi.org/10.1063/1.368257
  4. Sweetser, K., 1997, 'Infrared Imaging with Ferroelectrics,' Integrated Ferroelectrics, Vol. 17, pp. 349-358 https://doi.org/10.1080/10584589708013009
  5. Wood, R. A., Han, C. J. and Kruse, P. W., 1992, 'Integrated Uncooled Infrared Detector Imaging Arrays,' Proc. of the 1992 Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC, pp. 132-135 https://doi.org/10.1109/SOLSEN.1992.228308
  6. Muller, M., Budde, W., Gottfried-Gottfried R., Hubel, A., Jahne, R. and Kuck, H., 1995, 'A Thermoelectric Infrared Radiation Sensor with Monolithically Integrated Amplifier Stage and Temperature Sensor,' Proc. TRANSDUCERS '95, Stockholm, Sweden, pp. 640-643
  7. Liu, W. G., Ko, J. S. and Zhu, W., 2000, 'Device Patterning of PZT/Pt/Ti Thin Films on $SiO_2/Si_3N_4$ Membrane by a Chemical Wet Etching Approach,' J. Mat. Sci. Lett., Vol. 19, pp. 2263-2265 https://doi.org/10.1023/A:1006745428656
  8. Liu, W. G., Ko, J. S. and Zhu, W., 2000, 'Influences of Thin Ni Layer on the Electrical and Absorption Properties of PZT Thin Film Pyroelectric IR Sensors,' J. Infrared Pysics & Technology, Vol. 41, pp. 169-173 https://doi.org/10.1016/S1350-4495(99)00058-4