Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Figure of Merit for Deposition Conditions in ITO Films

  • Kim, H.H. (Electronic Department, Doowon Technology College) ;
  • Cho, M.J. (Department of Electrical Engineering, Chungbuk National University) ;
  • Park, W.J. (Department of Electrical Engineering, Chungbuk National University) ;
  • Lee, J.G. (Department of Electrical Engineering, Chungbuk National University) ;
  • Lim, K.J. (Department of Electrical Engineering, Chungbuk National University)
  • Published : 2002.06.01
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Abstract

Indium tin oxide (ITO) films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\_$sh/ and T$\^$10// R$\_$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 ($\times$10$\^$-3/Ω$\^$-1/), respectively.

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References

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