Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Reduction of Plasma Process Induced Damage during HDP IMD Deposition

  • Kim, Sang-Yung (ANAM Semiconductor Inc.) ;
  • Lee, Woo-Sun (Department of Electrical Engineering Chosun University) ;
  • Seo, Yong-Jin (School of Electrical & Electronics Engineering, Daebul University)
  • Published : 2002.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

Keywords

References

  1. J. -P Carrere, 'Topographical dependence of charging and new phenomenon during ICP CVD process', P2ID proceeding 2000, p. 164, 2000
  2. G. S. Hwang, 'Mechanism of charging damage during interlevel oxide deposition in high density plasma tools', P2ID proceeding 1998, p. 164, 1998
  3. C. L Cha, 'Improved PE CVD Pre-metal oxide liner deposition process with low residual charge non-uniformity in film to avoid excessive PID", P2ID proceeding 2000, p. 38, 2000
  4. S. -Y. Kim, N. -H. Kim, Y. -J. Seo, C. -I. Kim, W. -S. Lee, and E. -G. Chang, 'A study on relationship between pattern wafer and pattern wafer for STI CMP', J. of KIEEME(in Korean), PA-2 , p.211,1999
  5. H. S. Koh, J. Y. Park, and G. H. Kim, 'Rempval of nox by plused streamer discharge', J. of KIEEME (in Korean), Vol. 10, No. 8, p. 807, 1997
  6. Y. -B. Kim, J. -T. Ryu, and K. Oura, 'Field electron emission form amorphous carbon thin film grown using RF magnetron sputtering method', J. of KIEEME(in Korean), Vol. 14, No. 3, p.234, 2001