Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Properties of Diffraction Efficiency in Polarization Holography using the Ag and MgF2/AsGeSeS Multi-layer

Ag 및 MgF2/AsGeSeS 다층박막에서의 편광 홀로그래피 회절효율 특성

  • 나선웅 (광운대학교 전자재료공학과) ;
  • 여철호 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 김종빈 (조선대학교 전자공학과)
  • Published : 2002.12.01
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Abstract

We have carried out two-beam interference experiments to form holographic gratings on As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, Ag/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by the +lst order intensity. The maximum diffraction efficiency of As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ and MgF$_2$/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer were 0.8%, 1.4% and 3.1% under intensity polarization holography, respectively.

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References

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