Chemical Binding States of Ti and O Elements in Anodic Ti Oxide Films

Ti 양극산화 피막에서 Ti 및 O원소의 화학결합 상태

  • 유창우 (국민대학교 신소재공학부) ;
  • 오한준 (한서대학교 재료공학과) ;
  • 이종호 (한서대학교 화학과) ;
  • 장재명 (국민대학교 신소재공학부) ;
  • 지충수 (국민대학교 신소재공학부)
  • Published : 2002.12.01

Abstract

To investigate behaviors of Ti and O elements and microstructures of anodic titanium oxide films, the films were prepared by anodizing pure titanium in $H_2$S $O_4$, $H_3$P $O_4$, and $H_2O$$_2$ mixed solution at 180V. The microstructures and chemical states of the elements were analyzed using SEM, X-ray mapping, AFM, XRD, XPS (depth profile). The films formed on a titanium substrate showed porous layers which were composed of pore and wall, And with increasing anodizing time a hexagonal shape of cell structures were dominant and solace roughness increased. From the XRD result the structure of the Ti $O_2$ layer was anatase type of crystal on the whole. In the XPS spectra it was found that Ti and O were chemically binded in forms of Ti $O_2$, TiOH, $Ti_2$ $O_3$ at Ti 2p, and Ti $O_2$, $Ti_2$ $O_3$, $P_2$ $O_{5}$, S $O_4^{2-}$ at O ls respectively. Concentration of Ti $O_2$ decreased as the depth increased from the surface of the oxide film towards the substrate, but to the contrary concentrations of TiOH and $Ti_2$ $O_3$ increased.d.

Keywords

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