Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지
DOI QR코드

DOI QR Code

Optical Properties and Structural Analysis of SiO2 Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition

PECVD법에 의해 증착된 SiO2 후막의 광학적 성질 및 구조적 분석

  • Cho, Sung-Min (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Kim, Yong-Tak (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Seo, Yong-Gon (Optical Telecommunication Research Center, Korea Electronics Technology Institute) ;
  • Yoon, Hyung-Do (Optical Telecommunication Research Center, Korea Electronics Technology Institute) ;
  • Im, Young-Min (Optical Telecommunication Research Center, Korea Electronics Technology Institute) ;
  • Yoon, Dae-Ho (Department of Advanced Materials Engineering, Sungkyunkwan University)
  • 조성민 (성균관대학교 신소재공학과) ;
  • 김용탁 (성균관대학교 신소재공학과) ;
  • 서용곤 (전자부품연구원 광부품연구센터) ;
  • 윤형도 (전자부품연구원 광부품연구센터) ;
  • 임영민 (전자부품연구원 광부품연구센터) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • Published : 2002.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).

저온($320^{\circ}$C)에서 $SiH_4$와 $N_2O$ 가스의 혼합을 통해 플라즈마화학기상증착(PECVD)법을 이용하여 실리카 광도파로의 클래딩막으로 사용되는 $SiO_2$ 후막을 제조하였으며, 공정변수로는 $N_2O/SiH_4$ 유량비와 RF power에 변화를 주었다. 증착된 시편은 $N_2$ 분위기의 열처리로에서 $1050{\circ}$에서 2시간동안 열처리하였다. $N_2O/SiH_4$ 유량비가 증가함에 따라 증착속도는 $9.4~2.9{\mu}m /h$까지 감소하였으며, RF power가 증가함에 따라 증착속도는 $4.7~6.9{\mu}m /h$까지 증가하였다. 두께 및 굴절률은 Prism Coupler를 이용하여 분석하였다. 화학적 성질 및 구조적 성질은 X-ray Photoelectron Spectroscopy(XPS)와 Fourier Transform-Infrared Spectroscopy(FT-IR)를 이용하여 분석하였으며, Scanning Electron Microscopy(SEM)를 이용하여 시편의 단면을 관찰하였다.

Keywords

References

  1. S. C. Deshmukh and E. S. Aykil, 'Investigation of $SiO_2$Plasma Enhanced Chemical Vapor Deposition Through Tet-raethoxysilane Using Attenuated Total Reflection Fourier Transform Infrared Spectroscopy,' J. Vac. Sci. Technol., A 13 2355-67 (1995)
  2. N. Takato, K. Jinguji, M. Yasu, H. Toba and M. Kawachi, 'Silica-based Single-mode Waveguide on Silicon and their Application to Guided-wave Optical Interferometers,' J. of Lightwave TechnoI., 6 1003-10 (1988) https://doi.org/10.1109/50.4091
  3. J. K. Sim, Y. H. Lee, H. K. Sung and T. G. Choi, 'The Effective $P_2O_5$ Doping into $B_2O_3-P_2O_5-SiO_2$ Silica Layer Fabrication by Flame Hydrolysis Deposition(in Kor.),' J. Kor. Ceram. Soc., 35 [4] 364-70 (1998)
  4. E. S. Bulat, M. Tabasky and B Tweed, et al., 'Fabrication of Waveguide using Low-temperature Plasma Processing Tech-nique,' J. Vac. Sci. TechnoI., All 1268-74 (1995)
  5. E. M. Yeatman, M. M. Ahmad, O. McCarthy, A. Vannucci, P. Gastaldo, D. Barbier, D. Mongardien and C. Moronvalle, 'Optical Gain in Er-doped $SiO_2-TiO_2$ Waveguide Fabricated by the Sol-gel Technique,' Opt. Commun., 164 19-25 (1999) https://doi.org/10.1016/S0030-4018(99)00171-6
  6. Y. Kuo, 'Plasma Enhanced Chemical Vapor Deposited Sil-icon Nitride as a Gate Dielectric Film for Amorphous Sil-icon Thin Film Transistors,' Vacuum, 51 741-45 (1998) https://doi.org/10.1016/S0042-207X(98)00282-6
  7. Pereyra and M. I. Alayo, 'High Quality Low Temperature DPECVD Silicon Dioxide,' J. Non-CrystaIline Solids, 212 225-31 (1997) https://doi.org/10.1016/S0022-3093(96)00650-3
  8. J. T. Fitch, S. S. Kim and G. Lucovsky, 'Thermal Sta-bilization of Device Quality Films Deposited at Low Tem-peratures,' J. Vac. Sci. Technol., A8 [3] 1871-77 (1990)
  9. A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford and N. Maley, 'Infrared Absorption Strength and Hydrogen Content of Hydrogenated Amorphous Silicon,' Phys. Rev. B, 45 13367-77 (1992) https://doi.org/10.1103/PhysRevB.45.13367
  10. C. Tosello, F. Rossi, S. Ronchin, R. Rolli, G. C. Righini, F. Pozzi, S. Pelli, M. Fossi, E. Moser, M. Montagna, M. Fer-rari, C. Duverger, A. Chiappini and C. D. Bernardi, 'Erbium-activated Silica-titania Planar Waveguides on Silica-on-sil-icon Substrates Prepared by RF Sputtering,' J. Non-Cryst. Solids, 284 230-36 (2001) https://doi.org/10.1016/S0022-3093(01)00407-0
  11. J. Zhang, Z. Ren, R. Liang, Y. Sui and W. Liu, 'Planar Opti-cal Waveguide Thin Films Grown by Microwave ECR PECVD,' Surface and Coating Technol., 131 116-20 (2000) https://doi.org/10.1016/S0257-8972(00)00748-9
  12. S. M. Cho, Y. T. Kim, Y. G. Seo, Y. M. Im and D. H. Yoon, 'Effects of $N_2O/SiH_4$, Flow Ratio and RF Power on Prop-erties of $SiO_2$ Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition(in Kor.),' J. Kor. Ceram. Soc., 38 [11] 1037-41 (2001)

Cited by

  1. Anode Materials vol.19, pp.1, 2013, https://doi.org/10.7464/ksct.2013.19.1.044