New Physics: Sae Mulli (새물리)

Korean Physical Society (한국물리학회)
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Experimental Study on Wet Thermal Oxides for SOI Fabrication

SOI 제작을 위한 습식 열산화막에 대한 실험적 고찰

Byun, Young-Tae;Kim, Hyoung-Kwon
변영태;김형권

  • Published : 2003.05.01
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Abstract

The thermal oxidation processes necessary for SOI fabrication with smart-cut technology were studied by using wet oxidation technique. Oxide strips were fabricated by using both a photolitho-graphic process and a wet etching technique. Their widths were 3, 4 and $5{\mu}m$ on an optical mask. A TENCO 500 surface profiler was used to measure the thickness of the oxide strips. Thermal oxides were grown for various oxidation times, $O_2$ flow rates, oxidation temperatures and cleaning methods. As a result, we found that the increase in the oxide thickness strongly depended on the oxidation temperature.

Smart-cut 기술을 이용하여 SOI 제작에 필요한 열산화(thermal oxidation) 공정이 습식 산화 방법을 이용하여 연구되었다. 산화막 띠들은 포토리소그라피 공정기술과 습식 식각 방법을 이용하여 제작되었다. 산화막 띠의 폭은 광마스크 상에서 3, 4, 5${\mu}m$이었다. TENCO 500 surface profiler가 산화막 띠의 두께를 측정하기 위해 이용되었다. 열산화막은 산화시간, 산소유량, 산화온도, 그리고 세정방법을 변화시켜 가면서 성장되었다. 그 결과 산화막 두께 증가는 산화온도에 크게 의존한다 것을 알았다.

Keywords

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