Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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High Quality Ultrathin Gate Oxides Grown by Low-Temperature Radical Induced Oxidation for High Performance SiGe Heterostructure CMOS Applications

저온 래디컬 산화법에 의한 고품질 초박막 게이트 산화막의 성장과 이를 이용한 고성능 실리콘-게르마늄 이종구조 CMOS의 제작

  • 송영주 (한국전자통신연구원 반도체-원천기술연구소) ;
  • 김상훈 (한국전자통신연구원 반도체-원천기술연구소) ;
  • 이내응 (성균관대학교 재료공학과) ;
  • 강진영 (한국전자통신연구원 반도체-원천기술연구소) ;
  • 심규환 (한국전자통신연구원 반도체-원천기술연구소)
  • Published : 2003.09.01
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Abstract

We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.

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References

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