Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of Deposition Mechanism of Laser CVD SiO2 Film

  • Sung, Yung-Kwon (Department of Electrical Engineering, College of Engineering, Korea University) ;
  • Song, Jeong-Myeon (Department of Electrical Engineering, College of Engineering, Korea University) ;
  • Moon, Byung-Moo (Department of Electrical Engineering, College of Engineering, Korea University)
  • Published : 2003.10.01
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Abstract

This study was performed to investigate the deposition mechanism of SiO$_2$ by ArF excimer laser(l93nm) CVD with Si$_2$H$\_$6/ and N$_2$O gas mixture and evaluate laser CVD quantitatively by modeling. With ArF excimer laser CVD, thin films can be deposited at low temperature(below 300$^{\circ}C$), with less damage and good uniformity owing to generation of conformal reaction species by singular wavelength of the laser beam. In this study, new model of SiO$_2$ deposition process by laser CVD was introduced and deposition rate was simulated by computer with the basis on this modeling. And simulation results were compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

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References

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