한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제40권12호
  • /
  • Pages.1165-1169
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  • 2003
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  • 1229-7801(pISSN)
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  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
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이중 이온빔 스퍼터링 방식을 사용한 보조 이온빔의 Ar/O2가스 유량에 따른 Ta2O5 박막의 제조 및 특성분석

Characteristics Analysis and Manufacture of Ta2O5 Thin Films Prepared by Dual Ion-beam Sputtering Deposition with Change of Ar/O2Gas Flow Rate of Assist Ion Beam

  • 윤석규 (성균관대학교 신소재공학과) ;
  • 김회경 (전자부품연구원 광부품연구센터) ;
  • 김근영 (성균관대학교 신소재공학과) ;
  • 김명진 (전자부품연구원 광부품연구센터) ;
  • 이형만 (전자부품연구원 광부품연구센터) ;
  • 이상현 (인하대학교 물리학과) ;
  • 황보창권 (인하대학교 물리학과) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • 발행 : 2003.12.01
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초록

이중 이온빔 스퍼터링(Dual ion-beam sputtering)을 사용하여 보조이온건의 Ar/O$_2$가스유량 변화에 따라 Si-(III) 기판과 glass에 Ta$_2$O$_{5}$ 박막을 증착시켰다. 보조 이온총의 산소 가스량의 비가 감소함에 따라서 증착되는 Ta$_2$O$_{5}$ 박막의 성장속도는 감소하였으며, 굴절률은 $O_2$ 가스의 양이 0∼12sccm인 범위에서 2.09(at 1550nm)로 일정한 값을 나타내었다. Ar:O$_2$가 3: 12인 조건에서 화학양론 조성인 Ta$_2$O$_{5}$를 형성하였으며, 표면 거칠기도 가장 작은 값을 나타내었다.나타내었다.

The Ta$_2$O$_{5}$ thin film was deposited on Si-(III) and glass substrate with the change of Ar:O$_2$ gas flow rate in the assist ion gun by the Dual ion-Beam Sputtering (DIBS). As the $O_2$ gas flow of the assist ion gun was decreased, the deposition rate of the thin films decreased. The refractive index was fixed (2.11, at 1550 nm) without regarding to $O_2$ gas flow of the range 3∼12 sccm in assist ion gun. The condition of Ar:O$_2$=3:12 was formatted stoichiometry composition of Ta$_2$O$_{5}$ and the ms roughness was small (0.183 nm).

키워드

참고문헌

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