Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Characteristics of $ZrO_2$ Films Deposited by Using the Atomic Layer Deposition Method

Lee, Jang-Hee;Koo, Jae-Hyoung;Sim, Hyun-Sang;Jeon, Hyeong-Tag;Won, Young-Do

  • Published : 2004.04.15
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Abstract

The physical and the electrical properties of $ZrO_2$ dielectric film were investigated to determine if this film could be applied as a potential replacement for the $SiO_2$ gate dielectric. $ZrO_2$ films were successfully deposited on p-type Si substrates by using the atomic layer deposition (ALD) technique with $ZrCl_4\;and\;H_2O$. The $ZrO_2$films exhibited a very low chlorine content below the detection limit of the Auger electron spectrometer and showed the stoichiometric characteristics of $ZrO_2$. The interfacial layer formed between the $ZrO_2$ film and the Si substrate was observed and analyzed by using X-ray photoelectron spectroscopy and was found to be Zr-silicate and/or a $SiO_x$ layer with an amorphous phase. This interfacial layer became thicker as the annealing temperature was increased. Cross-sectional transmission electron microscopy images of the $ZrO_2$ films showed a randomly oriented polycrystalline structure. The flat-band voltage and the calculated dielectric constant of the $ZrO_2$ film were 0.7 V and 13.7, respectively. The leakage current of the $ZrO_2$ films was $7.5\;{\times}\;10^{-5}\;A/cm^2$ at a gate bias voltage of ${\mid}\;V_G-V_{FB}\;{\mid}$ = 2 Volts with an equivalent oxide thickness value of 1.9 nm.

Keywords

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