Abstract
$ZrTiO_{4}$ thin films were successfully prepared on Pt/Ti/$SiO_{2}$/Si(100) substrates by a sol-gel process and gel films were heat-treated at various temperatures. The surface morphology, crystal structure, and dielectric properties of the thin films were investigated. It was possible to obtain $ZrTiO_{4}$ phase at temperatures above 650$^{\circ}C$ for 2 h, which is much lower than the bulk sintering temperature. The microstructure of well-crystallized $ZrTiO_{4}$ thin films was a fine-grained microstructure less than 70 nm in grain size and the surface morphology was smooth with 22.4 rms roughness. The dielectric constant and loss of $ZrTiO_{4}$ thin films were 38 and 0.006, respectively, for thin films with 450 nm thickness heat-treated at 900$^{\circ}C$ for 2 h.