Abstract
Electric field aligned, single-walled carbon nanotubes are grown between electrodes using thermal chemical vapour deposition (CVD) of methane. The growth occurs on a thin film layered catalyst of aluminium, iron and molybdenum patterned on top of electrodes. The nanotubes bridge 10 $\mu$m sized electrode gaps and have a typical diameter of less than 2 nm as measured by Raman spectroscopy and atomic force microscopy. We present electrical transport measurements on a directly grown nanotube which shows p-type semiconducting behaviour.