Abstract
Sputter-deposited Al-doped zinc oxide (ZnO:Al) is an attractive transparent conductive oxide material for application as transparent electrode in various electronic devices. In this work, the ZnO:Al films are prepared by the capacitively couped DC magnetron sputtering on glass substrates and the influence of the substrate temperature and working gas pressure on the electrical, optical and morphological properties are investigated. We find that the ZnO:Al film with the optimum deposition parameters shows the resistivity of $0.96{\times}10^{-3}\;{\Omega}cm$ and the transmittance of average 90% in the wavelength range of the visible spectrum.