Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of Hydrogenated Amorphous Carbon (a-C:H) Thin Films Grown by Close Field UnBalanced Magnetron Sputtering Method

비대칭 마그네트론 스퍼터링법으로 성장된 a-C:H의 물리적 특성

  • 박용섭 (성균관대학교 정보통신공학부, 플라즈마 응용 표면기술 연구센타) ;
  • 홍병유 (성균관대학교 정보통신공학부, 플라즈마 응용 표면기술 연구센타)
  • Published : 2004.03.01
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Abstract

The Hydrogenated amorphous carbon(a-C:H) thin films are deposited on silicon with a close field unbalanced magnetron(CFUBM) sputtering systems. The experimental data are obtained on the depositon rate and physical properties of a-C:H films using DC bias voltage and Ar/C$_2$H$_2$ pressure. The depostion rate and the surface roughness decrease with DC bias voltage, but the hardness of the thin films increases with DC bias voltage. And the position of G-peak moves to lower wavenumber indicating an increase in diamond-like carbon characteristics with the lower Ar/C$_2$H$_2$ pressure.

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