Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Investigation of the Alignment Phenomena on the a-C:H Thin Films by PECVD System using Ion-beam Alignment Method

  • Park, Chang-Joon (Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University) ;
  • Hwang, Jeoung-Yeon (Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University) ;
  • Seo, Dae-Shik (Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University) ;
  • Ahn, Han-Jin (Department of Metallurgical Engineering, College of Eng., Yonsei University) ;
  • Kim, Kyung-Chan (Department of Metallurgical Engineering, College of Eng., Yonsei University) ;
  • Baik, Hong-Koo (Department of Metallurgical Engineering, College of Eng., Yonsei University)
  • Published : 2004.02.01
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Abstract

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film by plasma enhanced chemical vapor deposition (PECVD) system for 30 sec under 30W rf power at a gas pressure of 1.4＊10$\^$-1/ torr. A high pretilt angle of about 5 by ion beam exposure on the a-C:H thin film surface was measured. A good LC alignment by the ion beam alignment method on the a-C:H thin film surface was observed at annealing temperature of 250$^{\circ}C$, and the alignment defect of NLC was observed above annealing temperature of 300$^{\circ}C$. Consequently, the high LC pretilt angle and the good thermal stability of LC alignment by the ion beam alignment method on the a-C:H thin film by PECVD method as working gas at 30W rf bias condition can be achieved.

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References

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