Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation AZO(ZnO:Al) Thin Film for FBAR. by FTS Method

대향타겟스퍼터링법에 의한 FBAR용 AZO(ZnO:Al) 박막의 제작

  • 금민종 (경원대학교 전기정보공학과) ;
  • 김경환 (경원대학교 전기정보공학과)
  • Published : 2004.04.01
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Abstract

In this study, the AZO thin films were prepared as a function of oxygen gas flow ratio at room temperature by FTS(Facing Targets Sputtering) apparatus using Zn:Al(metal)-Zn:Al(metal) or Zn(metal)-ZnO:Al(ceramic). The film thickness, crystalline and electric properties of AZO thin film was evaluated by $\alpha$-step, XRD and 4-point probe. In the results, the resistivity of AZO thin film was shown the lowest value about 8${\times}$10$^{-2}$ $\Omega$-cm(Zn:Al-Zn:Al), 3${\times}$10$^{-1}$ $\Omega$-cm(Zn-ZnO:Al) at the oxygen gas flow ratio 0.3. And the AZO thin film has good crystalline at oxygen gas flow ration 0.4, using Zn:Al-Zn:Al targets.

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References

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