Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Effect of the Coating on the Structure and Optical Properties of GaN Nanowires

  • Lee, Jong-Soo (Department of Electrical Engineering, Korea University) ;
  • Sim, Sung-Kyu (Department of Electrical Engineering, Korea University) ;
  • Min, Byung-Don (Department of Electrical Engineering, Korea University) ;
  • Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University) ;
  • Kim, Hyun-Suk (Department of Electrical Engineering, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
  • Published : 2004.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

Structural and optical properties of as-synthesized, Ga$_2$O$_3$-coated, and Al$_2$O$_3$-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH$_3$ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2nm-thick Ga$_2$O$_3$ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al$_2$O$_3$ by atomic layer deposition technique. Our study suggests that the Al$_2$O$_3$-coating passivates some of surface states in the GaN nanowires.

Keywords

References

  1. T. Nishida, N. Kobayashi, and T. Ban, 'GaN-free transparent ultraviolet light-emitting diodes', Appl. Phys. Lett., Vol. 82, p. 1, 2003 https://doi.org/10.1063/1.1533851
  2. D. Walker, A. Saxler, P. Kung, X. Zhang, M. amilton, J. Diaz, and M. Razeghi, 'Visible blind GaN p-i-n Photodiodes', Appl. Phys. Lett.,Vol. 72, p. 3303,1998 https://doi.org/10.1063/1.121631
  3. M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, ''Catalytic growth of zinc oxide nanowires by vapor transport', Adv. Mater., Vol. 13, p. 113, 2001 https://doi.org/10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO;2-H
  4. H. Z. Zhang, Y. C. Kong, Y. Z. Wang, X. Du, Z. G. Bai, J. J. Wang, D. P. Yu, Y. Ding, Q. L. Hang, and S. Q. Feng, '$Ga_2O_3$ nanowires prepared by physical evaporation', Solid State Commun., Vol. 109, p. 677, 1999 https://doi.org/10.1016/S0038-1098(99)00015-0
  5. L. J. lauhon, M. S. Gudlksen, D. Wang, and C. M. Lieber, 'Epitaxial core-shell and core-multishell nanowire heterostructures', Nature, Vol. 420, p. 57, 2003 https://doi.org/10.1038/nature01141
  6. S. Pal, R. Mahapatra, S. K. Ray, B. R. Chakraborty, S. M. Shivaprasad, S. K. lahiri, and D. N. Bose, 'Microwave plasma oxidation of gallium nitride', Thin solid films, Vol. 425, p. 20, 2003 https://doi.org/10.1016/S0040-6090(02)01055-6
  7. L. H. Peng, C. H. Liao, Y. C. Hsu, C. S. Jong, C. N. Huang, J. K. Ho, C. C. Chiu, and C. Y. Chen, 'Photoenhanced wet oxidation of gallium nitride', Appl. Phys. Lett., Vol. 76, p. 511, 2000 https://doi.org/10.1063/1.125804
  8. S. D. Wolter, B. P. Luther, D. L. Waltemyer, C. Onnby, S. E. Mohney, and R. J. Molnar, 'X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride', Appl. Phys. Lett., Vol. 70, p. 2156, 1997 https://doi.org/10.1063/1.118944
  9. N. J. Watkins, G. W. Wicks, and Y. Gao, 'Oxidation study of GaN using x-ray photoemission spectroscopy', Appl. Phys. Lett., Vol. 75,. p. 2602, 1999 https://doi.org/10.1063/1.125091
  10. H. Kim, S. J. Park, and H. Hwang, 'Thermally oxidized GaN film for use as gate insulators', J. Vac. Sci. Technol. B., Vol. 19, p. 579, 2001 https://doi.org/10.1116/1.1349733
  11. B. Lux, C. Colombier, and H. Altena, 'Preparation of alumina coatings by chemical vapour deposition', Thin Solid Films, Vol. 138, p. 49, 1986 https://doi.org/10.1016/0040-6090(86)90214-2
  12. Y. Kim, S. M. Lee, C. S. Park, S. I. Lee, and M. Y. Lee, 'Substrate dependence on the optical properties of $AL_2O_3$ films grown by atomic layer deposition', Appl. Phys. Lett., Vol. 71, p. 3604, 1997 https://doi.org/10.1063/1.120454
  13. W. S. Jeon, S. Yang, C. S. Lee, and S. W. Kang, 'Atomic layer deposition of $AL_2O_3$ thin films using trimethylaluminum and isopropyl alcohol', J. Electrochem. Soc., Vol. 149, p. C306, 2002
  14. A. Paranjpe, S. Gopinath, T. Ornstead, and R. Bubber, 'Atomic layer deposition of $ALO_x$ for thin film head gap applications', J. Electrochem. Soc., Vol. 148, p. G465, 2001 https://doi.org/10.1149/1.1385822
  15. Y. J. Lee and S.w. Kang, 'Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma', Electrochem. Solid State Lett., Vol. 5, p. C91, 2002 https://doi.org/10.1149/1.1503204
  16. J. S. Lee, M. I. Kang, S. Kim, M. S. Lee, Y. K. Lee, 'Growth of zinc oxide nanowires by thermal evaporation on vicinal Si(1 0 0) substrate', J. Cryst. Growth, Vol. 249, p. 201, 2003 https://doi.org/10.1016/S0022-0248(02)02091-2
  17. B. C. Kim, K. T. Sun, K. S. Park, K. J. Im, T. Noh, M. Y. Sung, S. Kim, S. Nahm, Y. N. Choi, and S. S. Park, '$\beta$-$Ga_2O_3$ nanowires synthesized from milled GaN powders', Appl. Phys. Lett., Vol. 80, p. 479, 2002 https://doi.org/10.1063/1.1435073
  18. J. S. Lee, K. Park, S. Nahm, S. W. Kim, and S. Kim, '$Ga_2O_3$ nanomaterials synthesized from ball-milled GaN powders', J. Cryst. Growth, Vo. 244, p. 287, 2002 https://doi.org/10.1016/S0022-0248(02)01656-1
  19. H. W. Seo, S. Y. Bae, J. Park, H. Yang, K. Park, and S. Kim, 'Strained gallium nitride nanowires',J. Chem. Phys.,Vol. 116, p. 9492, 2002 https://doi.org/10.1063/1.1475748
  20. J. C. Chou, S. Y. Yang, and Y. S. Wang, 'Study on the optoelectronic properties of amorphous selenium-based xerographic photoreceptors for electrophotography', Mater. Chem. Phys., Vol. 78, p. 666, 2003 https://doi.org/10.1016/S0254-0584(02)00304-8
  21. C. I. Wu and A. Kahn, 'Negative electron affinity and electron emission at cesiated GaN and AIN surfaces', Appl. Surf. Sci., Vol. 162-163 p. 250, 2000 https://doi.org/10.1016/S0169-4332(00)00200-2
  22. T. Yoshida, T. Hashizume, and H. Hasegawa, 'Characterization of interface electronic properties of low-temperature ultrathin oxides and oxynitrides formed on Si(111) surfaces by contactless capacitance-voltage and photoluminescence methods", Jpn. J. Appl. Phys., Vol. 36,p. 1453, 1997 https://doi.org/10.1143/JJAP.36.1453