Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Phase Transition with Electric Field in Ternary Chalcogenide Thin Films

  • Yang, Sung-Jun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Shin, Kyung (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
  • Published : 2004.10.01
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Abstract

Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm. Upper and lower electrodes were made of AI. I-V characteristics after impressing the variable pulses to GST and AST films. Tc(crystallization temperature) of AST system is lower than that of the GST system, so that the current pulse width of crystallization process can be decreased.

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References

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