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Characteristics of Friction Affecting CMP Results

CMP 결과에 영향을 미치는 마찰 특성에 관한 연구

  • 박범영 (부산대학교 정밀기계공학과) ;
  • 이현섭 (부산대학교 정밀기계공학과) ;
  • 김형재 (부산대학교 정밀기계공학과) ;
  • 서헌덕 (부산대학교 정밀기계공학과) ;
  • 김구연 (부산대학교 정밀기계공학과) ;
  • 정해도 (부산대학교 기계공학부)
  • Published : 2004.10.01

Abstract

Chemical mechanical polishing (CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various friction signals were attained and analyzed with the kind of pad, abrasive and abrasive concentration. As a result of experiment, the lubrication regime is classified with ηv/p(η, v and p; the viscosity, relative velocity and pressure). The characteristics of friction and material removal mechanism is also different as a function of the kind of abrasive and the abrasive concentration in slurry. Especially, the material removal per unit distance is directly proportional to the friction force and the non~uniformity has relation to the coefficient of friction.

Keywords

References

  1. 김상용, 서용진, 이우선, 이강현, 장의구, '슬러리와 패드 변화에 따른 텅스텐 플러그 CMP 공정의 최적화', 전기전자재료학회 논문지, 13권, 7호, p. 568, 2000
  2. A. K. Sikder, F. Gigio, ]. Wood, A. Kumar, and M. Anthony, 'Optimization of tribology properties of silicon dioxide during the chemical mechanical planarization process', J. of Electronic materials, Vol. 30, No. 12, p. 1520, 2001 https://doi.org/10.1007/s11664-001-0168-y
  3. 김상용, 서용진, 이우선, 장의구, '실리콘 웨이퍼위에 증착된 실리케이트 산화막의 CMP 슬러리 오염 특성', 전기전자재료학회논문지, 13권, 2호, p. 131, 2000
  4. M. Tomozawa, 'Oxide CMP mechanisms', Solid State Technology, p. 169, 1977
  5. J. M. Steigerwarld, 'Chemical mechanical planarization of microelectronic materials', John Wiley & Sons, p. 129, 1997
  6. B. Bhushan. 'Principles applications of tribology', John Wiley & Sons, p. 1. 1999
  7. K. C. Ludema, 'Friction, wear, lubrication', CRC Press, p. 111. 1996
  8. P. Powell, 'Engineering with polymers', Champman and Hall, p. 89, 1983
  9. H. D. Seo, S. H. Lee, and H. D. Jeong, 'Characterization of the composite conditioning aided by ultrasonic vibration', Electrochemical Society Proceedings, Vol. 99-37, p. 445, 2000
  10. G. W. Stachowiak, 'Engineering Tribology', Elsevier, p. 561, 1993
  11. N. Chandrasekaran, 'Material removal mechanism of oxide and nitride CMP with ceria and silica-based slurries-analysis of slurry particles pre- and post-dielectric CMP', Materials Research Society Proceeding, Vol. 816, p. K9.2.1, 2004
  12. D. Wang, ]. Lee, K. Holland, T. Bibby, S. Beaudoin, T. Cale, 'Von-rnises stress In chemical mechanical polishing process', J. of Electrochemical Society, Vol. 144(4), p. 1121, 1997 https://doi.org/10.1149/1.1837542

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