Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
권호 표지
DOI QR코드

DOI QR Code

Characterizatics of Composite Silicides from Co/Ni Structure

코발트/니켈 적층구조 박막으로부터 형성된 복합실리사이드

  • Song Ohsung (Department of Materials Science and Engineering, The University of Seoul) ;
  • Cheong Seonghwee (Department of Materials Science and Engineering, The University of Seoul) ;
  • Kim Dugjoong (Department of Materials Science and Engineering, The University of Seoul) ;
  • Choi Yongyun (Department of Materials Science and Engineering, The University of Seoul)
  • 송오성 (서울시립대학교 신소재공학과) ;
  • 정성희 (서울시립대학교 신소재공학과) ;
  • 김득중 (서울시립대학교 신소재공학과) ;
  • 최용윤 (서울시립대학교 신소재공학과)
  • Published : 2004.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

15 nm-Co/15 nm-Ni/P-Si(100)[Type I] and 15 nm-Ni/15 nm-Co/P-Si(100)(Type II) bilayer structures were annealed using a rapid thermal annealer for 40sec at $700/sim1100^{\circ}C$. The annealed bilayer structures developed into composite NiCo silicides and resulting changes in sheet resistance, composition and microstructure were investigated using Auger electron spectroscopy and transmission electron microscopy. Prepared NiCoSix films were further treated in a sequential annealing set up from $900\sim1100^{\circ}C$ with 30 minutes. The sheet resistances of NiCoSix from Type I maintained less than $7\;{\Omega}/sq$. even at the temperature of $1100{\circ}C$, while those of Type II showed about $5\;{\Omega}/sq$. with the thinner and more uniform thickness. With the additive post annealing, the sheet resistance for all the composite silicides remained small up to $900^{\circ}C$. The proposed NiCoSix films were superior over the conventional single-phased silicides and may be easily incorporated into the sub-0.1 ${\mu}m$ process.

Keywords

References

  1. J. Y. Dai, Z. R. Guo, S. F. Tee, C. L. Tay, E. Er and S. Redkar, Appl. Phys. Lett., 78, 3091 (2001) https://doi.org/10.1063/1.1372621
  2. J. Prokop, C. E. Zybill and S. Veprek, Thin Solid Films, 359, 39 (2000) https://doi.org/10.1016/S0040-6090(99)00654-9
  3. C. Detavernier, R. L. Van Meirhaeghe and F. Cardon, J. Appl. Phys., 88, 133 (2000) https://doi.org/10.1063/1.373633
  4. J. Chen, J. P. Colinge, D. Flandre, R. Gillon, J. P. Raskin and D. Vanhoenacker, J. Electrochem. Soc., 144(7), (1997) https://doi.org/10.1149/1.1837833
  5. J. J. Sun, J. Y. Tsai and C. M. Osburn, IEEE Transactions on Electron Devices, 45(9), 1946 (1998) https://doi.org/10.1109/16.711360
  6. S. M. Sze, VLSI Technology Digest, John Wiley & Sons (1998)
  7. SIA Roadmap
  8. S. L. Hsia, T. Y Tan, P. Smith and G. E. McGuire, J. Appl. Phys., 88, 133 (2000) https://doi.org/10.1063/1.373633
  9. J. B. Lasky, J. S. Nakos, O. J. Cain and P. J. Geiss, IEEE Trans. Electron Devices, 38, 262 (1991) https://doi.org/10.1109/16.69904
  10. F. H. Ko, H. C. You, T. C. Chu, T. F. Lei, C. C. Hsu and H. L. Chen, Microelectronics Engineering, in Press (2004)
  11. O. O. Awadelkarim, S. J. Fonash, P. I. Mikulan, M. Ozaita and Y. D. Chan, Microelectronics Engineering, 28, 1-4,47 (1995) https://doi.org/10.1016/0167-9317(95)00013-X
  12. P. Xuan and J. Bokor, IEEE Electron Device Lett., 24(10), 634 (2003) https://doi.org/10.1109/LED.2003.817371
  13. J. Lutze, G. Scott and M. Manley, IEEE Electron Device Lett., 21(4), 155 (2000) https://doi.org/10.1109/55.830966
  14. H. Fang, M. C. Oztu, E. G. Seebauer and D. E. Batchelor, J. Electrochem. Soc., 146(11) 4240 (1999) https://doi.org/10.1149/1.1392621
  15. R. T. Tung, Applied Surface Science, 117/118, 268 (1997) https://doi.org/10.1016/S0169-4332(97)80092-X
  16. H. Zhang, J. Poole, R. Eller and M. Keefe, J. Vac. Sci. Technol. A, 17, 1904 (1999) https://doi.org/10.1116/1.581702
  17. M. L. A. Dass, D. B. Fraser and C. S. Wei, Appl. Phys. Lett, 58, 1308 (1991) https://doi.org/10.1063/1.104345
  18. A. Vantomme, M. A. Nicolet and N. D. Theodore, J. Appl. Phys., 75, 3882 (1994) https://doi.org/10.1063/1.356033
  19. S. H. Cheong and O. S. Song, Korean Journal of Materials Research, 13(11), 711 (2003) https://doi.org/10.3740/MRSK.2003.13.11.711
  20. S. H. Cheong and O. S. Song, Korean Journal of Materials Research, 13(2). 88 (2003) https://doi.org/10.3740/MRSK.2003.13.2.088
  21. S. K. Saha, R. S. Howell, M. K. Hatalis, Thin Solid Films, 347, 278 (1999) https://doi.org/10.1016/S0040-6090(99)00013-9