Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Structure and Properties of Sputtered Indium Tin Oxide Thin Film

R.F Sputtering 법으로 증착한 ITO 박막의 미세구조와 전기$\cdot$광학적 특성

  • Jung Y.H. (Yeungnam University, School of Materials Science and Engineering) ;
  • Lee E.S. (Yeungnam University, School of Materials Science and Engineering) ;
  • Munir B. (Yeungnam University, School of Materials Science and Engineering) ;
  • Wibowo R.A. (Yeungnam University, School of Materials Science and Engineering) ;
  • Kim K.H. (Yeungnam University, School of Materials Science and Engineering)
  • 정영희 (영남대학교 신소재공학부) ;
  • 이은수 (영남대학교 신소재공학부) ;
  • ;
  • ;
  • 김규호 (영남대학교 신소재공학부)
  • Published : 2005.08.01
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Abstract

Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.

Keywords

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