Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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A Numerical Study on the Growth and Composition of InGaAs, InGaP and InGaAsP Films Grown by MOCVD

MOCVD에 의한 InGaAs, InGaP 및 InGaAsP필름의 성장 및 조성변화에 대한 수치해석 연구

  • Im, Ik-Tae (Dept. of Automotive Eng., Iksan National College) ;
  • Kim, Dong-Suk (Dept. of Mechanical Eng., Graduate School, Hanyang Univ.) ;
  • Kim, Woo-Seung (Dept. of Mechanical Eng., Hanyang Univ.)
  • 임익태 (익산대학 자동차과) ;
  • 김동석 (한양대학교 대학원 기계공학과) ;
  • 김우승 (한양대학교 기계공학과)
  • Published : 2005.03.01
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Abstract

Metaloganic chemical vapor deposition, also known as metalorganic vapor phase epitaxy has become one of the main techniques for growing thin, high purity films for compound semiconductors such as GaAs, InP, and InGaAsP. In this study, the distribution of growth rate and composition of InGaAsP, InGaP, and InGaAs films are studied using computational method. The influences of process parameters such as pressure, temperature and precursors' partial pressure on the growth rate and composition distributions are analyzed. The film growth rate is increased in the upstream part according to the increase of temperature but not in the downstream part. The Ga composition in InGaAsP film shows an asymptotic behavior for temperature variation but As composition varies significantly within the temperature range considered in the present study. The overall film growth rates of InGaP, InGaAs and InGaAsP are decreased with increasing the Ga/In ratios of the source gases. Pressure variation does not seem to be a significant parameter to the film growth. Film growth characteristics of tertiary films such as InGaP and InGaAs show similar trends to the quaternary film, InGaAsP.

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