ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Radiation Effects on the Power MOSFET for Space Applications

  • Lho, Young-Hwan (Department of Railroad Electricity and Information Communication, Woosong University) ;
  • Kim, Ki-Yup (Radiation Application Team, Korea Atomic Energy Research Institute)
  • Received : 2005.04.26
  • Published : 2005.08.31
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Abstract

The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal-oxide semiconductor field-effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on-resistance for two kinds of MOSFETs (200 V and 100 V of $V_{DSS}$) are tested for ${\gamma}-irradiation$ and compared with the electrical specifications under the pre- and post-irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the ${\gamma}-radiation$ facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540.

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References

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