ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Low-Temperature Growth of $SiO_2$ Films by Plasma-Enhanced Atomic Layer Deposition

  • Received : 2004.08.06
  • Published : 2005.02.28
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Abstract

Silicon dioxide ($SiO_2$) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of $100\;to\;250^{\circ}C$, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of $SiO_2$ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A $SiO_2$ film grown at $250^{\circ}C$ exhibits a much lower leakage current than that grown at $100^{\circ}C$ due to its high film density and the fact that it contains deeper electron traps.

Keywords

References

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