Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
권호 표지

Influences of pH and Concentration of Surfactant on the Electrokinetic Behavior of a Nano-Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing

Kang, Hyun-Goo;Katoh, Takeo;Park, Jea-Gun;Paik, Un-Gyu;Park, Hyung-Soon

  • Published : 20051000
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Abstract

If the polishing performance in shallow trench isolation chemical mechanical polishing (STI-CMP) is to be improved, it is necessary to minimize silicon-nitride film loss and maintain a high removal rate of silicon-dioxide film where widening the process window. We have investigated how the pH and the concentration of the surfactant in a ceria slurry affect the silicon-nitride film loss and silicon-dioxide-to-silicon-nitride removal selectivity in the STI-CMP process. We found that the removal rate of silicon-dioxide film markedly decreased as the surfactant concentration was increased, regardless of the surfactants pH. However, the removal rates of silicon-nitride film for all slurries markedly decreased and very quickly saturated at a lower surfactant pH with increasing surfactant concentration. In addition, with an increase in the surfactant concentration, especially for the very diluted region (less than 0.3 wt%), slurries whose surfactants had a medium or the highest surfactant pH showed higher removal rates of the silicon-nitride film than did the slurry whose surfactant had the lowest surfactant pH.

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