Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
권호 표지

Optical characteristic of 1.5{\mu}m$ InGaAs/InGaAsP/InP QD Superluminescent Diode

$1.5{\mu}m$ InGaAs/InGaAsP/InP 양자점 Superluminescent Diode의 광 특성

  • Yoo, Young-Chae (Nano Device Research Center, Korea Institute of Science and Technology, Department of Electronic and Electrical Engineering, SungKyunKwan University) ;
  • Lee, Jung-Il (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Kim, Kyoung-Chan (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Kim, Eun-Kyu (Department of Physics, Hanyang University) ;
  • Kim, Gil-Ho (Department of Electronic and Electrical Engineering, SungKyunKwan University) ;
  • Han, Il-Ki (Nano Device Research Center, Korea Institute of Science and Technology)
  • 유영채 (한국과학기술연구원 나노소자연구센터, 성균관대학교 전자전기공학과) ;
  • 이정일 (한국과학기술연구원 나노소자연구센터) ;
  • 김경찬 (한국과학기술연구원 나노소자연구센터) ;
  • 김은규 (한양대학교 물리학과) ;
  • 김길호 (성균관대학교 전자전기공학과) ;
  • 한일기 (한국과학기술연구원 나노소자연구센터)
  • Published : 2006.09.01
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Abstract

Superluminescent diodes (SLD) with the emitting wavelength of $1.55{\mu}m$ was fabricated on InGaAs quantum dot structure grown by MOCVD. The output power and 3-dB bandwidth at room temperature and continuous wave operation were 3 mw and 55 nm, respectively.

MOCVD로 성장된 InGaAs 양자점을 이용하여 $1.5{\mu}m$의 발광파장을 갖는 고휘도 발광소자 (Superluminescent diode, SLD)를 제작하였다. 상온에서 SLD의 광출력은 CW 3 mW 였고, 3-dB 파장대역폭은 55 nm 이었다.

Keywords

References

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