Analysis on FIB-Sputtering Process using Taguchi Method

다구찌 기법을 이용한 FIB-Sputtering 가공 특성 분석

  • 이석우 (한국생산기술연구원) ;
  • 최병열 (한국생산기술연구원 e가공공정팀) ;
  • 강은구 (한국생산기술연구원 e가공공정팀) ;
  • 홍원표 (한국생산기술연구원 e가공공정팀) ;
  • 최헌종 (한국생산기술연구원 e가공공정팀)
  • Published : 2006.12.15

Abstract

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. The target of this paper is the analysis of FIB sputtering process according to tilt angle, dwell time and overlap for application of 3D micro and pattern fabrication and to find the effective beam scanning conditions using Taguchi method. Therefore we make the conclusions that tilt angle is dominant parameter for sputtering yield. Burr size is reduced as tilt angle is higher.

Keywords

References

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