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Defect Analysis of Gd2O2S : Tb Using Coincidence Doppler Broadening Positron Annihilation Spectroscopy

Gd2O2S:Tb의 동시 계수 도플러 양전자 소멸법에 의한 결함 특성

  • Lee, C.Y. (Department of Physics, Hannam University) ;
  • Bae, S.H. (Department of Radiology, Konyang University Hospital) ;
  • Kim, J.H. (Radiopharmaceuticals Lab, KIRAMS) ;
  • Kwon, J.H. (Nuclear Materials Technology Division, KAERI)
  • 이종용 (한남대학교 이과대학 물리학과) ;
  • 배석환 (건양대학교 병원 진단방사선과) ;
  • 김재홍 (원자력의학원 RI 및 방사성의약품개발실) ;
  • 권준현 (한국원자력연구소 원자력 재료기술개발부)
  • Published : 2006.07.27

Abstract

Coincidence Doppler Broadening (CDB) of positron annihilation spectroscopy was applied to analyze defects in the chemical state of Department of Physics, $Gd_2O_2S$:Tb intensifying screens. The screen samples were irradiated by 80 MV X-rays in hospital and were used for 0, 2, 4, and 6 years respectively. There was a positive relationship between the S-parameter values and time of exposure to X-rays. Most of the defects were indicated to have been generated by X-rays. A 1D CDB was developed in order to reduce the background noise, and the S-parameter values of the $Gd_2O_2S$:Tb intensifying screens, using the 1D CDB, varied between 0.4974 and 0.4991.

Keywords

References

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