Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
권호 표지

Characterization of ZnO : Al-Thin-Film-Passivated Porous Silicon

Kim, Kyungha;Lee, Chongmu;Prabakar, Kandasamy

  • Published : 20060000
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Abstract

Al-doped ZnO (AZO) films were deposited on porous silicon (PS) and on glass substrates by using a reactive rf-cosputtering process from targets of ZnO and Al. The effects of the ZnO target’s rf-sputtering power on the structural and the photoluminescence (PL) properties were studied. The crystalline structures of the AZO films were improved, and the degree of (002) preferred orientation was enhanced. The optical transmittance spectra showed more than 80 % transmittance in the visible region, and the band gap was found to be direct. Strong monochromatic blue emission located at 2.78 eV was observed for the AZO films deposited at 150 W. Freshly prepared PS showed an emission band in the green spectral region. We show that deposition of AZO on PS does not degrade the skeleton of the PS and enhances the PL intensity. The PL band shifts to high energy for AZO films deposited on PS, and the intensity becomes stable. The current-voltage characteristics of AZO/PS heterostructures were also studied. The ideality factor was found to be 19, and the series resistance determined from the forward characteristics was 36 M

Keywords

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